
Active Front End Harmonic Filter
Active harmonic filter(SiC) is a new generation of active power filter (APF) designed with silicon carbide materials. Its dual-core design offers faster operation, lower losses, and higher device efficiency (>99%). In addition to dynamically compensating for harmonics, APF products can also compensate for reactive power, addressing power quality issues such as voltage fluctuations and flicker. APF products utilize state-of-the-art control technology for fully automated control, making them the preferred choice for harmonic elimination.
Products Description
SiC Active Harmonic Filter is a next-generation, fully digital harmonic elimination device developed in-house by us. Compared with traditional technology, it offers distinct advantages such as faster response time, compact size, enhanced functionality, easy installation and maintenance, and straightforward commissioning. It can effectively address power quality problems with ease. APF dynamically compensates for harmonics, effectively addressing such problems as low power factor and three-phase imbalances in power quality.
The main power device adopts the next-generation semiconductor component SiC Mosfet, which offers a switching frequency greater than 100kHz, high power density, low loss, and high efficiency, with a harmonic filtering rate of up to 97%. It supports multiple compensation modes, including harmonics, reactive power, and three-phase imbalance. The PCBA is fully sealed, ensuring protection against dust, condensation, and salt spray. The device offers flexible installation options (cabinet-mounted or wall-mounted), and maintenance is straightforward.

Product Features

Data Sheet
| Electrical parameters | |
| Wiring method | Three-phase three-wire, three-phase four-wire |
| Operating voltage | 380V/220V±20% |
| Operating frequency | 50/60Hz, ±10% |
| Product specifications | 30A, 50A, 75A, 100A, 150A |
| Current transformer specifications | 50:5 ~ 20000:5, 50:1~20000:1 |
| Noise | <65dB |
| Technical features | |
| Switching devices | SiC Mosfet |
| Switching frequency | >100kHz |
| Heat dissipation methods | Intelligent air cooling |
| Heat dissipation control | Adaptive fan speed adjustment |
| Protection functions | Output overcurrent protection, output current limiting protection, over-temperature protection, DC bus overvoltage protection, AC input undervoltage protection, AC input overvoltage protection, control system fault protection, main circuit component damage and disconnection protection |
| Compensation performance | |
| Harmonic filtering rate | >97% |
| Overall efficiency | ≥99% |
| Active power loss | <1% |
| Harmonic filtering range | Harmonics from 2nd to 50th can be individually controlled and configured. |
| Total response time | <5ms |
| Resonance suppression | Active inhibition |
| Display Interface | |
| Display screen | 7-foot full-color touchscreen |
| Language | Chinese, English, and customizable languages. |
| Battery display | Displays data including distortion rate, power factor, power, voltage, and current. |
| Communication interface and protocol type | RS485, TCP/IP, Modbus protocols, and 4G long-distance data transmission. |
| Environmental conditions | |
| Operating temperature | -25℃~+50℃ |
| Relative humidity | <95%, no condensation |
| Altitude | <5000 meters (above 1000 meters, capacity decreases by 1% for every additional 100 meters) |
| Others | |
| Protection level | IP20 rating, other ratings available upon request. |
| Installation method | Rack-mount, wall-mount, integrated cabinet configurations. |
Q&A
What is the function of the SiC Mosfet?
SiC MOSFETs' ability to tolerate higher voltages and currents enables smaller and lighter systems. This small decrease, along with their higher efficiency, makes them ideal for applications in which space and energy usage are crucial.
Is SiC mosfet or igbt?
SiC MOSFET is short for silicon carbide metal-oxide-semiconductor field-effect transistor. Si IGBTs are current-controlled devices that are toggled by a current applied to the gate terminal of the transistor, while MOSFETs are voltage-controlled by a voltage applied to the gate terminal.
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