Hybrid Power Filter
Hybrid active filter(SiC) is a new generation of active power filter (APF) designed with silicon carbide materials. Its dual-core design offers faster operation, lower losses, and higher device efficiency (>99%). In addition to dynamically compensating for harmonics, APF products can also compensate for reactive power, addressing power quality issues such as voltage fluctuations and flicker. APF products utilize state-of-the-art control technology for fully automated control, making them the preferred choice for harmonic elimination.
Products Description
SiC Active Harmonic Filter is a next-generation, fully digital harmonic elimination device developed in-house by us. Compared with traditional technology, it offers distinct advantages such as faster response time, compact size, enhanced functionality, easy installation and maintenance, and straightforward commissioning. It can effectively address power quality problems with ease. APF dynamically compensates for harmonics, effectively addressing such problems as low power factor and three-phase imbalances in power quality.
The main power device adopts the next-generation semiconductor component SiC Mosfet, which offers a switching frequency greater than 100kHz, high power density, low loss, and high efficiency, with a harmonic filtering rate of up to 97%. It supports multiple compensation modes, including harmonics, reactive power, and three-phase imbalance. The PCBA is fully sealed, ensuring protection against dust, condensation, and salt spray. The device offers flexible installation options (cabinet-mounted or wall-mounted), and maintenance is straightforward.
Product Features
Data Sheet
| Electrical parameters | |
| Wiring method | Three-phase three-wire, three-phase four-wire |
| Operating voltage | 380V/220V±20% |
| Operating frequency | 50/60Hz, ±10% |
| Product specifications | 30A, 50A, 75A, 100A,150A |
| Current transformer specifications | 50:5 ~ 20000:5, 50:1~20000:1 |
| Noise | ＜65dB |
| Technical features | |
| Switching devices | SiC Mosfet |
| Switching frequency | >100kHz |
| Heat dissipation methods | Intelligent air cooling |
| Heat dissipation control | Adaptive fan speed adjustment |
| Protection functions | Output overcurrent protection, output current limiting protection, over-temperature protection, DC bus overvoltage protection, AC input undervoltage protection, AC input overvoltage protection, control system fault protection, main circuit component damage and disconnection protection |
| Compensation performance | |
| Harmonic filtering rate | ＞97% |
| Overall efficiency | ≥99% |
| Active power loss | ＜1% |
| Harmonic filtering range | Harmonics from 2nd to 50th can be individually controlled and configured. |
| Total response time | ＜5ms |
| Resonance suppression | Active inhibition |
| Display Interface | |
| Display screen | 7-foot full-color touchscreen |
| Language | Chinese, English, and customizable languages. |
| Battery display | Displays data including distortion rate, power factor, power, voltage, and current. |
| Communication interface and protocol type | RS485, TCP/IP, Modbus protocols, and 4G long-distance data transmission. |
| Environmental conditions | |
| Operating temperature | -25℃~+50℃ |
| Relative humidity | <95%, no condensation |
| Altitude | <5000 meters (above 1000 meters, capacity decreases by 1% for every additional 100 meters) |
| Others | |
| Protection level | IP20 rating, other ratings available upon request. |
| Installation method | Rack-mount, wall-mount, integrated cabinet configurations. |
Q&A
What are the core advantages of silicon carbide (SiC)?
Silicon carbide is a wide-bandgap semiconductor with superior material properties compared to silicon.For AHF, this translates to three key advantages directly impacting thermal management:
1. Higher switching frequency: SiC MOSFETs switch much faster than IGBTs. This allows for more accurate reconstruction of the anti-harmonic current, improving performance, especially in higher harmonics.
2. Lower switching losses: This has the greatest impact on heat dissipation. The fast switching characteristics of SiC devices result in less heat generated per switching transition.
3. Higher operating temperature: SiC semiconductors can theoretically operate at junction temperatures up to 200°C or higher, while the typical operating temperature limit for silicon IGBTs is 150°C. This provides a greater safety margin.
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